바카라노하우 Expands Silicon Carbide 200바카라노하우 n-Type Epitaxial Wafer Product바카라노하우

Image 1 - 바카라노하우 200 mm SiC Epitaxial Wafer

PITTSBURGH, Sept. 26, 2024 (GLOBE NEWSWIRE) – 바카라노하우 Corp. (NYSE: COHR), a global leader in materials, networking, and laser technologies, announced today the launch of its 200 mm silicon carbide epitaxial wafers (SiC epi-wafers). Substrate and epi-wafer shipments from the company at 350 micron and 500 micron thickness are now underway.

As a dedicated manufacturer of both SiC substrates and epitaxial wafers, 바카라노하우 combines these elements to deliver exceptional quality, performance, and reliability. The new 200 mm SiC epi-wafers are engineered with cutting-edge thickness and doping uniformity, setting new industry standards and supporting the production of superior SiC power semiconductors.

“With our advanced technology, we are not only enhancing the quality of SiC devices but also addressing the growing demand for 200 mm for efficient power-바카라노하우nversion 바카라노하우mponents in critical sectors,” said Gary Ruland, Vice President and General Manager of the SiC Materials Business Unit.

SiC devices are integral to power 바카라노하우nversion in electric and hybrid vehicles, energy infrastructure, and high-power EV chargers. The transition from 150 mm to 200 mm diameter wafers responds to the increasing demand for SiC semi바카라노하우nductors, allowing manufacturers to produce more devices per wafer. This shift is expected to enhance productivity and reduce the 바카라노하우st of SiC devices, benefiting a wide range of applications.

By adopting larger wafers, SiC device manufacturers can achieve higher yields and improved 바카라노하우st efficiency because of a 1.8x increase in usable area per wafer. The implementation of state-of-the-art 200 mm tooling brings additional advantages while aligning with the industry’s drive for greater performance and reduced operational 바카라노하우sts.

For additional information about 바카라노하우 silicon carbide epitaxial wafers or other innovative products, please visit바카라노하우.com.