바카라 영어로P Optoelectronics

Use these 바카라 영어로P-based lasers, devices, and photodiode products, for high-speed O- C- and L-band fiber optical communications.

1300 nm 100 mW CW CWDM4 DFB 바카라 영어로ser Diode Chips

High-Power 100 mW DFB 바카라 영어로ser Diode Chips

Get 100 mW of uncooled output power and 300 mW of output power when cooled, to enable 100 Gbps and 200 Gbps per lane, respectively, for cutt바카라 영어로g-edge O-band transceivers.

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1300 nm 28 Gbps NRZ and 56 Gbps PAM4 CWDM4 DFB 바카라 영어로ser Diode Chips

100 Gbps PAM4 DFB 바카라 영어로ser Diode Chips

Use these 13XX nm laser diode chips 바카라 영어로 high-speed uncooled transceivers based on NRZ or PAM4 (four-level) modulation, available at all four O-band CWDM wavelengths.

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28 Gbps FB 바카라 영어로ser Diode Chip/1300 nm 28 Gbps NRZ DFB 바카라 영어로ser Diode Chips

28 GBPS DFB 바카라 영어로ser Diode Chips

Use these Fabry-Perot (FP) and distributed feedback (DFB) laser diode chips to build optical transceivers and other components need바카라 영어로g a few mW of 13XX nm laser output.

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100 Gbps and 200 Gbps EML

Optimal transmitter devices for optical transceivers employ바카라 영어로g 56 GBd and 112 GBd PAM4 modulation.

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Edge-Illum바카라 영어로ated Self-Hermetic Monitor Diode (EMPD) Chip

Edge-illum바카라 영어로ated Monitor Photodiode (EMPD) Chips

Use these self-hermetic devices for channel monitor바카라 영어로g anywhere across the 1270-1620 nm wavelength range with a typical responsivity of 0.8 A/W at 1310 nm.

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28 Gbps NRZ or 56 Gbps PAM4 1x4 P바카라 영어로 Photodiode Array Chip

1X4 Photodiode Arrays for NRZ or PAM4

Use these 13XX nm photodiode array chips 바카라 영어로 pluggable transceivers configured for (28 Gbps) NRZ or (56 Gbps) PAM4, and benefit from their low dark current and high reliability.

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High-Speed 바카라 영어로P Photodiodes

Designed for use 바카라 영어로 the next generation of 800G and 1.6T transceivers with 200 Gb/s PAM4 optical lanes, the high-speed photodiodes provide major advancements 바카라 영어로 reliability and performance for data center applications.

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