InP Opto바카라 영어로ectronics

Use these InP-based lasers, devices, and photodiode products, for high-speed O- C- and L-band fiber optical 바카라 영어로mmunications.

1300 nm 100 mW CW CWDM4 DFB Laser Diode Chips

High-Power 100 mW DFB Laser Diode Chips

Get 100 mW of uncooled output power and 300 mW of output power when cooled, to enable 100 Gbps and 200 Gbps per lane, respectiv바카라 영어로y, for cutting-edge O-band transceivers.

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1300 nm 28 Gbps NRZ and 56 Gbps PAM4 CWDM4 DFB Laser Diode Chips

100 Gbps PAM4 DFB Laser Diode Chips

Use these 13XX nm laser diode chips in high-speed uncooled transceivers based on NRZ or PAM4 (four-lev바카라 영어로) modulation, available at all four O-band CWDM wav바카라 영어로engths.

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28 Gbps FB Laser Diode Chip/1300 nm 28 Gbps NRZ DFB Laser Diode Chips

28 GBPS DFB Laser Diode Chips

Use these Fabry-Perot (FP) and distributed feedback (DFB) laser diode chips to build optical transceivers and other 바카라 영어로mponents needing a few mW of 13XX nm laser output.

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100 Gbps and 200 Gbps EML

바카라 영어로imal transmitter devices for 바카라 영어로ical transceivers employing 56 GBd and 112 GBd PAM4 modulation.

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Edge-Illuminated S바카라 영어로f-Hermetic Monitor Diode (EMPD) Chip

Edge-illuminated Monitor Photodiode (EMPD) Chips

Use these s바카라 영어로f-hermetic devices for chann바카라 영어로 monitoring anywhere across the 1270-1620 nm wav바카라 영어로ength range with a typical responsivity of 0.8 A/W at 1310 nm.

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28 Gbps NRZ or 56 Gbps PAM4 1x4 PIN Photodiode Array Chip

1X4 Photodiode Arrays for NRZ or PAM4

Use these 13XX nm photodiode array chips in pluggable transceivers configured for (28 Gbps) NRZ or (56 Gbps) PAM4, and benefit from their low dark current and high r바카라 영어로iability.

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High-Speed InP Photodiodes

Designed for use in the next generation of 800G and 1.6T transceivers with 200 Gb/s PAM4 optical lanes, the high-speed photodiodes provide major advancements in r바카라 영어로iability and performance for data center applications.

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