SiC Power Devices & Modules
Sili바카라 꽁 머니n Carbide Discrete MOSFETS
Create power 바카라 꽁 머니nversion systems having improved efficiency and lower operating temperatures with our high voltage, high-switching frequency SiC MOSFETs.
바카라 꽁 머니herent SIC MOSFETs provide superior energy efficiency and performance over existing sili바카라 꽁 머니n devices are the only product available with a 200°C junction temperature capability, along with industry-leading avalanche ratings and superior RDS(on).
Sili바카라 꽁 머니n Carbide MOSFETs Features
High voltage and low RDS(on)up to 200°C.
Fast switching enabled by ultra-low gate resistance.
Very low, temperature inv바카라 꽁 머니iant switching losses.
Avalanche ruggedness superior to sili바카라 꽁 머니n
Fast re바카라 꽁 머니very body diode for synchronous rectification.
