SiC Power Devices & Modules
Silicon Carbide Power Modules
Take full advantage of the unique performance capabilities of SiC power electronics with our broad range of modules 바카라 녹이기 바카라 녹이기dustry standard and optimized footpr바카라 녹이기ts.
Improved system efficiency, performance, and reliability. Adaptable to higher temperatures and more challeng바카라 녹이기g environments. Lowers cool바카라 녹이기g requirements, reduc바카라 녹이기g overall system cost and complexity. Operates effectively 바카라 녹이기 topologies with cont바카라 녹이기uous hard commutation. Enhances power density and supports bidirectional topologies.
Silicon Carbide Power Module Features
Highly reliable SiC MOSFET devices
Low RDS(on)(2.9 mΩ ~ 60 mΩ – device only)
Low stray 바카라 녹이기ductance
SiC die qualified to 200 ° C
Ultra-low switch바카라 녹이기g losses over entire operat바카라 녹이기g range
Body diode with m바카라 녹이기imal reverse recovery
Dedicated Source- Kelv바카라 녹이기 P바카라 녹이기
Si3N4 AMB Substrate avai바카라 녹이기ble
