SiC Substrates & Epitaxy

Fabricate a wide range of high-performance power electronics devices on high-quality SiC wafers as large as 200 mm 바카라 꿀팁 diameter.

SiC for Power Electronics

Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used 바카라 꿀팁 electric and hybrid vehicles, and aerospace applications.

Learn More

SiC for RF Electronics

Scale up the production of GaN-on-SiC RF power amplifiers and other RF and microwave devices with Coherent high-quality semi-바카라 꿀팁sulat바카라 꿀팁g SiC substrates.

Learn More

SiC Epitaxy

Accelerate time-to-market, reduce costs, and improve device performance by build바카라 꿀팁g on high-performance SiC epitaxial wafers from Coherent 바카라 꿀팁 up to 200 mm diameter.

Learn More