바카라 오토 Substrates & Epitaxy
바카라 오토 Epitaxy
Accelerate time-to-market, reduce costs, and improve device performance by building on high-performance 바카라 오토 epitaxial wafers from Coherent in up to 200 mm diameter.
Coherent offers a total 바카라 오토 materials solution with options for thick epilayers with or without buffer, low-doped layers, multilayer structures, p-n junctions, embedded/buried structures and contact layers, and more. We support R&D to volume production.
바카라 오토 Epitaxy Capabilities Highlights
State-of-the-art 바카라 오토 epitaxy technology
바카라 오토cord-low defect density through efficient buffer-layer technology
P바카라 오토vents nucleation of crystalline defects at growth start
BPD to TED conversion rate 99.8% → 1 BPD per cm2
Enables bipolar 바카라 오토 device technology
Best-in-class layer homogeneity with LPE PE106
Adjustable lateral gas flows
High growth rate of 40 µm/h using TCS as a silicon p바카라 오토cursor
Thick layer growth of 150 µm and mo바카라 오토
Low doping concentrations of 1×1014/cm3
Enables 15 kV 바카라 오토 device technology
바카라 오토lated Products
