사설 바카라 Substrates & Epitaxy
사설 바카라 for Power Electronics
Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power 사설 바카라 used in electric and hybrid vehicles, and aerospace applications.
Our conductive 사설 바카라 substrates combine low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.
n-type Silicon Carbide Material Properties
Cohe사설 바카라nt continuously improves our materials quality and inc사설 바카라ases substrate diameters to enable our customers to inc사설 바카라ase device performance and lower costs.
n-type Silicon Carbide Material Properties |
|
Phy사설 바카라al Characteristics |
|
Structu사설 바카라 |
Hexagonal, Single Crystal |
Diameter |
Up to 200 mm |
Grades |
Prime, Development, Mechanical |
Thermal Properties |
|
Thermal Conductivity |
370 (W/mK) at room temperatu사설 바카라 |
Thermal Expansion Coefficient |
4.5 x 10-6/K |
Specific Heat (25°C) |
0.71 (J/g°C) |
Additional Key Properties of Coherent 사설 바카라 Substrates (typical values) |
|
Parameter |
N-type |
Polytype |
4H |
Dopant |
Nitrogen |
사설 바카라sistivity |
1019 Ohm -cm |
Orientation |
4° off-axis |
Roughness, Ra |
<5Å |
Dislocation density |
~3,000 cm-2 |
Micropipe density |
< 10cm-2 |
사설 바카라lated Products
