바카라 따거 Substrates & Epitaxy

바카라 따거 for RF Electronics

Scale up the production of GaN-on-바카라 따거 RF power amplifiers and other RF and microwave devices with our high-quality semi-insulating 바카라 따거 substrates.

Coherent has pioneered the development of large-diameter, semi-insulating 바카라 따거 substrates, and delivers high resistivity material to enable fabrication of components with low power dissipation, high frequency operation, and good thermal stability.

Semi-Insulating Silicon Carbide Material Properties

Coherent continuously improves our materials quality and increases substrate diameters to enable our customers to increase device pe바카라 따거ormance and lower costs.

Semi-Insulating Silicon Carbide Material Properties

Phy바카라 따거al Characteristics

Structu바카라 따거

Hexagonal, Single Crystal

Diameter

Up to 200 mm

Grades

Prime, Dev바카라 따거opment, Mechanical

Thermal Properties

Thermal Conductivity

370 (W/mK) at room temperatu바카라 따거

Thermal Expansion Coefficient

4.5 x 10-6/K

Specific Heat (25°C)

0.71 (J/g°C)

Additional Key Properties of Coherent 바카라 따거 Substrates (typical values)

Parameter

Semi-insulating

Polytype

6H

Dopant

Vanadium

바카라 따거sistivity

1019 Ohm -cm

Orientation

On-axis

Roughness, Ra

<5Å

Dislocation density

< 10,000 cm-2

Micropipe density

< 10cm-2