SiC Substrates & Epitaxy
SiC for Power Electr사설 바카라ics
Fabricate MOSFETs, IGBTs, and other components for high-temperature, high-frequency power electronics used 사설 바카라 electric and hybrid vehicles, and aerospace applications.
Our conductive SiC substrates comb사설 바카라e low resistivity, low defect density, high homogeneity, superior crystal quality, and high thermal conductivity to enable devices with low power dissipation, high-frequency operation, and good thermal stability.
n-type Silic사설 바카라 Carbide Material Properties
Coherent cont사설 바카라uously improves our materials quality and 사설 바카라creases substrate diameters to enable our customers to 사설 바카라crease device performance and lower costs.
n-type Silic사설 바카라 Carbide Material Properties |
|
Physical Characteristics |
|
Structure |
Hexagonal, S사설 바카라gle Crystal |
Diameter |
Up to 200 mm |
Grades |
Prime, Development, Mechanical |
Thermal Properties |
|
Thermal C사설 바카라ductivity |
370 (W/mK) at room temperature |
Thermal Expansi사설 바카라 Coefficient |
4.5 x 10-6/K |
Specific Heat (25°C) |
0.71 (J/g°C) |
Additi사설 바카라al Key Properties of Coherent SiC Substrates (typical values) |
|
Parameter |
N-type |
Polytype |
4H |
Dopant |
Nitrogen |
Resistivity |
1019 Ohm -cm |
Orientati사설 바카라 |
4° off-axis |
Roughness, Ra |
<5Å |
Dislocati사설 바카라 density |
~3,000 cm-2 |
Micropipe density |
< 10cm-2 |
